9

Vibrational excited-state transitions of substitutional carbon in gallium arsenide

Year:
1999
Language:
english
File:
PDF, 94 KB
english, 1999
14

Influence of compensation level on EL2 concentration in semi-insulating gallium arsenide

Year:
2003
Language:
english
File:
PDF, 273 KB
english, 2003
17

Buchbesprechungen

Year:
1973
Language:
german
File:
PDF, 329 KB
german, 1973
24

Symmetry and structure of N–O shallow donor complexes in silicon

Year:
2012
Language:
english
File:
PDF, 276 KB
english, 2012
26

Piezospectroscopy of nitrogen-oxygen shallow donor complexes in silicon

Year:
2010
Language:
english
File:
PDF, 458 KB
english, 2010
27

alloys

Year:
2004
Language:
english
File:
PDF, 57 KB
english, 2004
29

in GaAs and its relation to the EL 3 level

Year:
1991
Language:
english
File:
PDF, 220 KB
english, 1991
30

The paramagnetic charge state of substitutional oxygen in GaAs

Year:
1995
Language:
english
File:
PDF, 240 KB
english, 1995
40

Experimental evidence for a negative- U center in gallium arsenide related to oxygen

Year:
1990
Language:
english
File:
PDF, 735 KB
english, 1990
41

Complex in Oxygen-Implanted GaAs:Si

Year:
1997
Language:
english
File:
PDF, 141 KB
english, 1997
46

Spectroscopic evidence for a N-Ga vacancy defect in GaAs

Year:
2004
Language:
english
File:
PDF, 100 KB
english, 2004
47

Fine structure of the oxygen-related local mode at 714 cm−1 in GaAs

Year:
1989
Language:
english
File:
PDF, 535 KB
english, 1989
48

Local mode spectroscopy of the carbon acceptor in GaAs: New experimental aspects

Year:
1995
Language:
english
File:
PDF, 251 KB
english, 1995
49

Calibration of the Fe2+ intracenter absorption in InP

Year:
1991
Language:
english
File:
PDF, 558 KB
english, 1991
50

Photoluminescence study of nitrogen implanted silicon

Year:
1984
Language:
english
File:
PDF, 419 KB
english, 1984